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| 产品描述：
Single N-Channel 100 V 0.22 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Qg - Gate Charge: | 13.3 nC |
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| Packaging: | Tube |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Unit Weight: | 0.211644 oz |
| Mounting Style: | Through Hole |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 48 W |
| Factory Pack Quantity: | 50 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-220-3 |
| Id - Continuous Drain Current: | 10 A |
| Vgs - Gate-Source Voltage: | 16 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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