FET Feature | Logic Level Gate |
---|---|
Package / Case | TO-220-3 |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Gate Charge (Qg) @ Vgs | 79nC @ 4.5V |
Packaging | Tube |
Series | HEXFET® |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Input Capacitance (Ciss) @ Vds | 5090pF @ 10V |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 90A, 10V |
Power - Max | 210W |
Supplier Device Package | TO-220AB |
Standard Package | 50 |
Product Training Modules | Discrete Power MOSFETs 40V and Below |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Mounting Type | Through Hole |