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| 产品描述：
MOSFET N-CH 55V 89A TO-262
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| 标准包装：50 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
- 产品特性
- 技术文档
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
| Gate Charge (Qg) @ Vgs | 98nC @ 5V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 46A, 10V |
| Power - Max | 3.8W |
| Supplier Device Package | TO-262 |
| Standard Package | 50 |
| Packaging | Tube |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
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