FET Feature | Standard |
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Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Power - Max | 330W |
Supplier Device Package | D2PAK |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
FET Type | MOSFET N-Channel, Metal Oxide |
Series | HEXFET® |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 4460pF @ 25V |
RoHS | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 33A, 10V |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Online Catalog | N-Channel Standard FETs |
Family | FETs - Single |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Packaging | Tube |
数据手册: |
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