| IRFR9N20DPBF | ||
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| 产品描述：
Transistor, N-MOSFET, unipolar, 200V, 9.4A, 86W, DPAK
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Tube |
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| Qg - Gate Charge: | 18 nC |
| Pd - Power Dissipation: | 86 W |
| Package / Case: | TO-252-3 |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 9.3 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 75 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 9.4 A |
| Rise Time: | 16 ns |
| Type: | Smps Mosfet |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 7.5 ns |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 13 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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