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| 产品描述：
Single N-Channel 500 V 2.2 Ohm 135 nC HEXFET® Power Mosfet - TO-252AA
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| 标准包装：2000 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
- 技术文档
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power - Max | 78W |
| Supplier Device Package | D-Pak |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 810pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 2.2A, 10V |
| PCN Assembly/Origin | IRFR825/IRFB812 Fab Transfer 03/Oct/2013 Mosfet Backend Wafer Processing 23/Oct/2013 Assembly Site Addition 08/Dec/2014 |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Online Catalog | N-Channel Standard FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Packaging | Tape & Reel (TR) |
| 数据手册： |
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