Packaging: | Tube |
---|---|
Qg - Gate Charge: | 34 nC |
Pd - Power Dissipation: | 110 W |
Package / Case: | TO-252-3 |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | SMD/SMT |
Fall Time: | 28 ns |
Manufacturer: | Infineon |
Factory Pack Quantity: | 75 |
Brand: | Infineon Technologies |
RoHS: | Details |
Id - Continuous Drain Current: | 45 A |
Rise Time: | 59 ns |
Type: | Automotive Mosfet |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 22 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Configuration: | Single |
Unit Weight: | 0.012346 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 14 ns |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 39 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 75 V |
Transistor Type: | 1 N-Channel |
Maximum Operating Temperature: | + 175 C |