Rds On - Drain-Source Resistance: | 120 mOhms |
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Width: | 4.7 mm |
Pd - Power Dissipation: | 79 W |
Package / Case: | TO-220-3 |
Configuration: | Single |
Unit Weight: | 0.063493 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 13 ns |
Forward Transconductance - Min: | 9.3 S |
Series: | QFET |
Factory Pack Quantity: | 1000 |
Brand: | Fairchild Semiconductor |
Typical Turn-Off Delay Time: | 22 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | - 60 V |
Type: | MOSFET |
Maximum Operating Temperature: | + 175 C |
Packaging: | Bulk |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Height: | 9.4 mm |
Vgs - Gate-Source Voltage: | 25 V |
Mounting Style: | Through Hole |
Fall Time: | 60 ns |
Length: | 10.1 mm |
Manufacturer: | Fairchild Semiconductor |
Transistor Polarity: | P-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | FQP17P06_NL |
RoHS: | Details |
Id - Continuous Drain Current: | 17 A |
Rise Time: | 100 ns |
Transistor Type: | 1 P-Channel |
ECCN | EAR99 |
数据手册: |
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