Rds On - Drain-Source Resistance: | 750 mOhms |
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Width: | 5.7 mm |
Pd - Power Dissipation: | 120 W |
Package / Case: | TO-3P-3 |
Configuration: | Single |
Unit Weight: | 0.245577 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 60 ns |
Forward Transconductance - Min: | 10.5 S |
Series: | QFET |
Factory Pack Quantity: | 360 |
Brand: | Fairchild Semiconductor |
Typical Turn-Off Delay Time: | 155 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Type: | MOSFET |
Maximum Operating Temperature: | + 150 C |
Packaging: | Bulk |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Height: | 16.7 mm |
Vgs - Gate-Source Voltage: | 30 V |
Mounting Style: | Through Hole |
Fall Time: | 110 ns |
Length: | 15.7 mm |
Manufacturer: | Fairchild Semiconductor |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | FQAF13N80_NL |
RoHS: | Details |
Id - Continuous Drain Current: | 8 A |
Rise Time: | 150 ns |
Transistor Type: | 1 N-Channel |
ECCN | ECL99 |
数据手册: |
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