| FDMS3660AS | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
FDMS3660AS, 双 N沟道 MOSFET 晶体管, Vds=30 V, 8针 Power 56封装
|
||
| 标准包装：3000 | ||
| 数据手册： | ||
| ECAD模型:
|
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 21 nC, 64 nC |
| Pd - Power Dissipation: | 2.2 W, 2.5 W |
| Package / Case: | Power56-8 |
| Configuration: | Dual Common Gate |
| Unit Weight: | 0.006032 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 9 ns, 12 ns |
| Manufacturer: | Fairchild Semiconductor |
| Transistor Polarity: | N-Channel |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 13 A |
| Rise Time: | 3 ns, 5 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V, 2 V |
| Vgs - Gate-Source Voltage: | 12 V, 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 3 ns, 5 ns |
| Forward Transconductance - Min: | 173 S, 240 S |
| Series: | Power Stage PowerTrench |
| Factory Pack Quantity: | 3000 |
| Typical Turn-Off Delay Time: | 21 ns, 38 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 2 N-Channel |
| ECCN | ECL99 |
| 数据手册： |
|---|
登录之后就可发表评论
