FairchildFDMS3660AS
FDMS3660AS, 双 N沟道 MOSFET 晶体管, Vds=30 V, 8针 Power 56封装
Manufacturer Fairchild Semiconductor
Manufacturer # FDMS3660AS
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet FDMS3660AS.pdf
Specifications
-Packaging:
Reel
-Qg - Gate Charge:
21 nC, 64 nC
-Pd - Power Dissipation:
2.2 W, 2.5 W
-Package / Case:
Power56-8
-Configuration:
Dual Common Gate
-Unit Weight:
0.006032 oz
-Number of Channels:
2 Channel
-Typical Turn-On Delay Time:
9 ns, 12 ns
-Manufacturer:
Fairchild Semiconductor
-Transistor Polarity:
N-Channel
-Brand:
Fairchild Semiconductor
-RoHS:
 Details
-Id - Continuous Drain Current:
13 A
-Rise Time:
3 ns, 5 ns
-Maximum Operating Temperature:
+ 150 C
-Rds On - Drain-Source Resistance:
11 mOhms
-Minimum Operating Temperature:
- 55 C
-Technology:
Si
-Vgs th - Gate-Source Threshold Voltage:
1.5 V, 2 V
-Vgs - Gate-Source Voltage:
12 V, 20 V
-Mounting Style:
SMD/SMT
-Fall Time:
3 ns, 5 ns
-Forward Transconductance - Min:
173 S, 240 S
-Series:
Power Stage PowerTrench
-Factory Pack Quantity:
3000
-Typical Turn-Off Delay Time:
21 ns, 38 ns
-Product Category:
MOSFET
-Vds - Drain-Source Breakdown Voltage:
30 V
-Transistor Type:
2 N-Channel
Description
Availability
Ameya stock:Ameya owned stock
Supplier stock:Offline Manufacture or Manufacture authorized supplier owned stock , need double confirmation and share out from them
Consignment Stock:The stock show from Manufacture or Manufacture Authorized Distributor Online stock QTY.