FDMS3660AS
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Product description : FDMS3660AS, 双 N沟道 MOSFET 晶体管, Vds=30 V, 8针 Power 56封装
SPQ:3000
Datasheet : FDMS3660AS.pdf
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Packaging: Reel
Qg - Gate Charge: 21 nC, 64 nC
Pd - Power Dissipation: 2.2 W, 2.5 W
Package / Case: Power56-8
Configuration: Dual Common Gate
Unit Weight: 0.006032 oz
Number of Channels: 2 Channel
Typical Turn-On Delay Time: 9 ns, 12 ns
Manufacturer: Fairchild Semiconductor
Transistor Polarity: N-Channel
Brand: Fairchild Semiconductor
RoHS:  Details
Id - Continuous Drain Current: 13 A
Rise Time: 3 ns, 5 ns
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 11 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 1.5 V, 2 V
Vgs - Gate-Source Voltage: 12 V, 20 V
Mounting Style: SMD/SMT
Fall Time: 3 ns, 5 ns
Forward Transconductance - Min: 173 S, 240 S
Series: Power Stage PowerTrench
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 21 ns, 38 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V
Transistor Type: 2 N-Channel
Datasheet: FDMS3660AS.pdf
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