2N2222
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产品描述:
Transistor: NPN; bipolar; 30V; 0.8A; 0.5/1.2W; TO18; 4dB
标准包装:1
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Collector-Emitter Saturation Voltage: 1.6 V
Collector- Base Voltage VCBO: 60 V
Minimum Operating Temperature: - 65 C
Package / Case: TO-18
Gain Bandwidth Product fT: 250 MHz
Mounting Style: Through Hole
Maximum DC Collector Current: 0.8 A
Continuous Collector Current: 0.45 A
Manufacturer: Central Semiconductor
Transistor Polarity: NPN
Brand: Central Semiconductor
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 30 V
Width: 5.84 mm
Packaging: Bulk
Pd - Power Dissipation: 0.4 W
Height: 5.33 mm
Configuration: Single
Emitter- Base Voltage VEBO: 5 V
Length: 5.84 mm
DC Collector/Base Gain hfe Min: 35
Series: 2N2222
Factory Pack Quantity: 2000
Part # Aliases: BK
Product Category: Bipolar Transistors - BJT
Maximum Operating Temperature: + 150 C
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