The World's Smallest Reflector-Type High Brightness 3-Color LED

Release time:2017-05-12

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ROHM has recently announced the availability of an ultra-compact reflector-type LED optimized for consumer devices such as matrix light sources for gaming and wearables that demand increased miniaturization.

The MSL0402RGBU reflector-type 3-color LED leverages miniaturization technology cultivated over many years to achieve the smallest size in the industry (1.8mmx1.6mm). This enables high-density mounting and provides excellent color mixing characteristics, ensuring support for high resolution LED matrices.

In order to turn on matrix light sources it is necessary to take measures against ESD. Unlike conventional solutions that utilize a Zener diode, theMSL0402RGBU adopts an element with high ESD resistance. This makes it possible to superior ESD protection without a Zener diode and prevent light emission of unnecessary blocks in matrix circuits, resulting in clearer display.

In recent years, LEDs capable of representing the full color range are expected to be widely adopted in a variety of fields, including digital signage requiring improved design flexibility. At the same time, as applications become smaller and more sophisticated the need for greater expressiveness grows, along with increased miniaturization and long-term reliability. Up to now, ROHM offers ultra-compact molded type LEDs (PICOLED®), high brightness reflector types (MSL series), and compact high brightness 3-color LEDs with excellent color mixing, but to meet market demands ROHM developed the industry's smallest high brightness reflector-type RGB LEDs (MSL0402RGBU).

Availability: Now
Pricing: $0.23 /unit (1,000pcs)

Key Features

1. Reflector-type high brightness RGB LED delivers greater color representation in the smallest form factor on the market

Until now, 3.5mm x 2.8mm LEDs are typically used in dot matrices, resulting in a coarse display which can be problematic when higher resolution is demanded. In response, ROHM utilizes miniaturization technology cultivated through decades of LED development to reduce mounting area by 70% over ROHM's conventional LEDs. This makes it possible to construct high brightness, ultra-high resolution matrix light sources that contribute to improved performance and display capability in gaming and other applications.

3-Color LED Types

2. Class-leading anti-sulfuration performance increases reliability

The combination of silver plated frames and silicon resins used in conventional LEDs will typically result in a drop in brightness after 1 year due to 30% sulfuration caused by sulfur components in the air originating from tobacco smoke and exhaust gases, presenting problems for long-term reliability. In response, the MSL0402RGBU utilizes a gold plated substrate that prevents sulfuration even when silicon resin packages are used. This minimizes brightness degradations and contributes to greater long-term application reliability.

Anti-Sulfuration Performance Comparison

3. High ESD resistance eliminates the need for a Zener diode

Normally, Zener diodes are used as a countermeasure to static electricity in LEDs. However, in matrix circuits this can cause current to flow to other LEDs, resulting in unwanted light emission. In contrast, the MSL0402RGBU employs a high ESD resistance element that eliminates the need for a Zener protection diode, ensuring superior display performance in matrix circuits.

High ESD resistance


Part No. Color IF (mA) VF (V) Brightness (mcd) λD (nm)
R 20 2.1 400 624
G 3.5 550 527
B 3.3 180 470


  • Matrix light sources for gaming and entertainment

  • Display light sources for industrial and consumer equipment

High ESD resistance

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SiC Power MOSFETsROHM’s SiC MOSFETs feature low ON resistance and low switching lossROHM’s silicon carbide (SiC) MOSFETs are available in a range of current ratings and packages. They come in a variety of ON resistances and voltage (VDSS) ratings of 650 V, 1,200 V, or 1,700 V. Unlike IGBTs there is no tail current during turn-off resulting in faster operation and reduced switching loss. Also, unlike silicon devices, the ON resistance remains relatively constant even at high temperatures, minimizing conduction losses. Both 2nd generation planar with maximum short-circuit withstand time and 3rd generation trench with reduced input capacitance and lower gate charge models are offered. Bare dies up to 1,700 V are also available.FeaturesFast switching with low lossMaximum junction temperature: +175°CPackaged devices rated at 650 V, 1,200 V, or 1,700 VON resistance from 17 mΩ to 1,150 mΩSpice model and thermal model available2nd gen planar technology with longer short-circuit withstand timeNo limitations on the use of the body diode3rd gen trench technology with low input capacitance (CISS) and low gate charge (QG)DC blocking voltage: 650 V, 1,200 V, 1,700 VMinimal switching lossesOperating temperature range: -40°C to +175°CApplicationsInverters for induction heatingMotor drive invertersBidirectional convertersSolar invertersPower conditioners3rd Generation TO-247-4L Package with Kelvin Source Connection(NEW)ImageManufacturerPart NumberDescriptionAvailableQuantityView DetailsSCT3040KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3080KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3105KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3030ARC14650V NCH SIC TRENCH MOSFET IN 4P0View DetailsSCT3060ARC14650V NCH SIC TRENCH MOSFET IN 4P30View DetailsSCT3080ARC14650V NCH SIC TRENCH MOSFET IN 4P0View DetailsSiC Power MOSFETs SingleImageManufacturerPart NumberDescriptionAvailableQuantityView DetailsSCT2080KECUMOSFET N-CH 1200V 40A TO-24720View DetailsSCT2120AFCUMOSFET N-CH 650V 29A TO-220AB10View DetailsSCT2280KECUMOSFET N-CH 1200V 14A TO-24722View DetailsSCT2450KECUMOSFET N-CH 1200V 10A TO-24717View DetailsSCT2H12NZGC11MOSFET N-CH 1700V 3.7A TO-3PFM55View DetailsSiC Power MOSFETs ArraysImageManufacturerPart NumberDescriptionAvailablQuantityView DetailsBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE4View DetailsBSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE8View DetailsBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE22View DetailsBSM180D12P2C101MOSFET 2N-CH 1200V 180A MODULE10View Details
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