Series: | IKW20N60 |
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Packaging: | Tube |
Pd - Power Dissipation: | 170 W |
Minimum Operating Temperature: | - 40 C |
Part # Aliases: | IKW20N60H3FKSA1 IKW20N60H3XK SP000702556 |
RoHS: | Details |
Package / Case: | TO-247 |
Collector- Emitter Voltage VCEO Max: | 600 V |
Mounting Style: | Through Hole |
Maximum Operating Temperature: | + 150 C |
Manufacturer: | Infineon |
Collector-Emitter Saturation Voltage: | 1.95 V |
Continuous Collector Current at 25 C: | 20 A |
Factory Pack Quantity: | 240 |
Brand: | Infineon Technologies |
Gate-Emitter Leakage Current: | 100 nA |
Product Category: | IGBT Transistors |
Unit Weight: | 0.229281 oz |
Maximum Gate Emitter Voltage: | 20 V |
数据手册: |
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