| SPP04N80C3XKSA1 | ||
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| 产品描述：
Single N-Channel 800 V 1.3 Ohm 23 nC CoolMOS™ Power Mosfet - TO-220-3
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Packaging: | Tube |
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| Qg - Gate Charge: | 31 nC |
| Pd - Power Dissipation: | 63 W |
| Tradename: | CoolMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 12 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SP000683152 SPP04N80C3 SPP04N80C3XK |
| RoHS: | Details |
| Id - Continuous Drain Current: | 4 A |
| Rise Time: | 15 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 1.1 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 25 ns |
| Series: | CoolMOS C3 |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 72 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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