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| 产品描述：
N-Channel 1200 V 290 mΩ 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Tube |
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| Qg - Gate Charge: | 45 nC |
| Pd - Power Dissipation: | 175 W |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 10 ns |
| Series: | SiC MOSFETs |
| Factory Pack Quantity: | 30 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 20 A |
| Rise Time: | 16 ns |
| Maximum Operating Temperature: | + 200 C |
| Rds On - Drain-Source Resistance: | 215 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | SiC |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | - 10 V/+ 25 V |
| Mounting Style: | Through Hole |
| Fall Time: | 17 ns |
| Manufacturer: | STMicroelectronics |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 27 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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