Packaging: | Tube |
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Qg - Gate Charge: | 45 nC |
Pd - Power Dissipation: | 175 W |
Package / Case: | TO-247-3 |
Configuration: | Single |
Unit Weight: | 1.340411 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 10 ns |
Series: | SiC MOSFETs |
Factory Pack Quantity: | 30 |
Brand: | STMicroelectronics |
RoHS: | Details |
Id - Continuous Drain Current: | 20 A |
Rise Time: | 16 ns |
Maximum Operating Temperature: | + 200 C |
Rds On - Drain-Source Resistance: | 215 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | SiC |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Vgs - Gate-Source Voltage: | - 10 V/+ 25 V |
Mounting Style: | Through Hole |
Fall Time: | 17 ns |
Manufacturer: | STMicroelectronics |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 27 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 1200 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
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