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| 产品描述：
Single N-Channel 40 V 0.0065 Ohm 100 nC HEXFET® Power Mosfet - TO-220-3
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| 标准包装：1 | ||
| 数据手册： | ||
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| Power - Max | 200W |
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| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 78A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| FET Feature | Logic Level Gate |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) @ Vgs | 100nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 5330pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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