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| 产品描述：
IGBT 650V 8A 65W TO-263S
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Current - Collector Pulsed (Icm) | 12A |
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| Power - Max | 65W |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 17ns/69ns |
| Part Status | Active |
| Manufacturer | Rohm Semiconductor |
| Gate Charge | 13.5nC |
| Family | Transistors - IGBTs - Single |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Packaging | Tape & Reel (TR) |
| Lead Free Status / RoHS Status | 1 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Test Condition | 400V, 4A, 50 Ohm, 15V |
| Supplier Device Package | LPDS (TO-263S) |
| Current - Collector (Ic) (Max) | 8A |
| Category | Discrete Semiconductor Products |
| Reverse Recovery Time (trr) | 40ns |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Mounting Type | Surface Mount |
| Input Type | Standard |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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