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| 产品描述：
Transistor, N-MOSFET, unipolar, 500V, 0.4A, 1.8W, SOT223
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 10V |
| Power - Max | 1.8W |
| Supplier Device Package | PG-SOT223-4 |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| 数据手册： |
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