SI3900DV-T1-E3 specifications -Ameya360 electronic components purchase network


SI3900DV-T1-E3

ACTIVE EAR99
Product description : Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6
SPQ：1
Datasheet : --
ECAD Model:

Minimum Operating Temperature:	- 55 C
Packaging:	Reel
Product:	MOSFET Small Signal
Technology:	Si
Package / Case:	TSOP-6
Configuration:	Dual
Unit Weight:	0.000705 oz
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	10 ns
Manufacturer:	Vishay
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	SI3900DV-E3
RoHS:	Details
Id - Continuous Drain Current:	2 A
Rise Time:	30 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	125 mOhms
Width:	1.65 mm
Pd - Power Dissipation:	830 mW
Tradename:	TrenchFET
Height:	1 mm
Vgs - Gate-Source Voltage:	12 V
Mounting Style:	SMD/SMT
Fall Time:	30 ns
Length:	3.05 mm
Series:	SI3
Factory Pack Quantity:	3000
Brand:	Vishay Semiconductors
Typical Turn-Off Delay Time:	14 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	20 V
Transistor Type:	2 N-Channel
ECCN	EAR99

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Stock code :	88059
Mfg name :	Vishay
MPN :	SI3900DV-T1-E3
Product description :	Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6

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