RGTH60TS65DGC11
  • 1 (Unlimited)
  • 不建议用于新设计
  • TO-247N
产品描述:
IGBT 650V 58A 194W TO-247N
标准包装:1
数据手册:
ECAD模型:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Current - Collector Pulsed (Icm) 120A
Power - Max 194W
IGBT Type Trench Field Stop
Td (on/off) @ 25°C 27ns/105ns
Part Status Active
Manufacturer Rohm Semiconductor
Gate Charge 58nC
Family Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Packaging Tube
Lead Free Status / RoHS Status 1
RoHS Lead free / RoHS Compliant
Package / Case TO-247-3
Test Condition 400V, 30A, 10 Ohm, 15V
Supplier Device Package TO-247N
Current - Collector (Ic) (Max) 58A
Category Discrete Semiconductor Products
Reverse Recovery Time (trr) 58ns
Voltage - Collector Emitter Breakdown (Max) 650V
Mounting Type Through Hole
Input Type Standard
Operating Temperature -40°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
数据手册:
登录之后就可发表评论