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| 产品描述：
Transistors Bipolar (BJT) Single, Pre-Biased
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| 标准包装：3000 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
|---|---|
| Resistor - Base (R1) (Ohms) | 2.2k |
| Power - Max | 200mW |
| Resistor - Emitter Base (R2) (Ohms) | 2.2k |
| Current - Collector (Ic) (Max) | 100mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Frequency - Transition | 250MHz |
| Package / Case | SC-85 |
| Transistor Type | PNP - Pre-Biased |
| Supplier Device Package | UMT3F |
| Part Status | Active |
| Manufacturer | Rohm Semiconductor |
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 10V |
| RoHS | Lead free / RoHS Compliant |
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