Forward Transconductance - Min: | 10 mS |
---|---|
Manufacturer: | InterFET |
Transistor Polarity: | N-Channel |
Technology: | Si |
RoHS: | Details |
Vgs - Gate-Source Breakdown Voltage: | - 25 V |
Id - Continuous Drain Current: | 1 nA |
Configuration: | Single |
Mounting Style: | Through Hole |
Drain-Source Current at Vgs=0: | 60 mA |
Pd - Power Dissipation: | 500 mW |
Factory Pack Quantity: | 1 |
Brand: | InterFET |
Package / Case: | TO-52-3 |
Product Category: | JFET |
Vds - Drain-Source Breakdown Voltage: | 10 V |
Gate-Source Cutoff Voltage: | - 6 V |
ECCN | EAR99 |