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| 产品描述：
MOSFET N-CH 800V 2.6A IPAK
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| 标准包装：1800 | ||
| 数据手册： | ||
| ECAD模型:
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Part Status | Active |
| Manufacturer | Fairchild Semiconductor |
| Series | SuperFET® II |
| Vgs(th) (Max) @ Id | 4.5V @ 260µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 2.25 Ohm @ 1.3A, 10V |
| Power - Max | 39W |
| Supplier Device Package | I-Pak |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 585pF @ 100V |
| 数据手册： |
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