| SI2302DDS-T1-GE3 | ||
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| 产品描述：
SI2302DDS Series N-Channel 20 V 2.6 A 0.067 Ω 3.5 nC SMT Mosfet - SOT-23
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Reel |
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| Qg - Gate Charge: | 3.5 nC |
| Pd - Power Dissipation: | 710 mW |
| Tradename: | TrenchFET |
| Vgs th - Gate-Source Threshold Voltage: | 0.85 V |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 30 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 57 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SOT-23-3 |
| Vgs - Gate-Source Voltage: | 8 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 13 S |
| Series: | SI2 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 2.9 A |
| Rise Time: | 7 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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