SI2302DDS-T1-GE3
  • ACTIVE
  • EAR99
Product description : SI2302DDS Series N-Channel 20 V 2.6 A 0.067 Ω 3.5 nC SMT Mosfet - SOT-23
SPQ:3000
Datasheet :
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Packaging: Reel
Qg - Gate Charge: 3.5 nC
Pd - Power Dissipation: 710 mW
Tradename: TrenchFET
Vgs th - Gate-Source Threshold Voltage: 0.85 V
Unit Weight: 0.050717 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 8 ns
Manufacturer: Vishay
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 30 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 20 V
Transistor Type: 1 N-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 57 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: SOT-23-3
Vgs - Gate-Source Voltage: 8 V
Mounting Style: SMD/SMT
Fall Time: 7 ns
Forward Transconductance - Min: 13 S
Series: SI2
Factory Pack Quantity: 3000
Brand: Vishay Semiconductors
RoHS:  Details
Id - Continuous Drain Current: 2.9 A
Rise Time: 7 ns
Maximum Operating Temperature: + 150 C
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