RQ3E080GNTB
  • 1 (Unlimited)
  • 量产中
  • 8-HSMT (3.2x3)
产品描述:
MOSFET N-CH 30V 8A 8-HSMT
标准包装:1
数据手册:
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Rds On (Max) @ Id, Vgs 16.7 mOhm @ 8A, 10V
Power - Max 2W
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) @ Vgs 5.8nC @ 10V
Category Discrete Semiconductor Products
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Packaging Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 15V
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
RoHS Lead free / RoHS Compliant
Package / Case 8-PowerVDFN
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Part Status Active
Manufacturer Rohm Semiconductor
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 295pF @ 15V
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) 2W (Ta), 15W (Tc)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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