Power - Max | 43W |
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Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.9A, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Part Status | Not For New Designs |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Packaging | Tube |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FET Feature | Standard |
Supplier Device Package | D-Pak |
Gate Charge (Qg) @ Vgs | 23nC @ 10V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 300pF @ 25V |
ECCN | EAR99 |
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