Qg - Gate Charge: | 1.4 nC, 2.1 nC |
---|---|
Packaging: | Reel |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Height: | 0.77 mm |
Vgs - Gate-Source Voltage: | 20 V |
Number of Channels: | 2 Channel |
Typical Turn-On Delay Time: | 6 nS, 9 nS |
Forward Transconductance - Min: | 1 S, 0.7 S |
Series: | US6M1 |
Factory Pack Quantity: | 3000 |
Brand: | ROHM Semiconductor |
RoHS: | Details |
Id - Continuous Drain Current: | 1.4 A |
Rise Time: | 6 ns, 8 ns |
Transistor Type: | 1 N-Channel, 1 P-Channel |
ECCN | EAR99 |
FET Feature | Logic Level Gate |
FET Type | N and P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Drain to Source Voltage (Vdss) | 30V, 20V |
Power - Max | 1W |
Lead Free Status / RoHS Status | 1 |
Base Part Number | 6M1 |
Rds On - Drain-Source Resistance: | 170 mOhms |
Width: | 1.7 mm |
Pd - Power Dissipation: | 1 W |
Package / Case: | TUMT-6 |
Configuration: | 1 N-Channel, 1 P-Channel |
Mounting Style: | SMD/SMT |
Fall Time: | 8 ns, 10 ns |
Length: | 2 mm |
Manufacturer: | ROHM Semiconductor |
Transistor Polarity: | N-Channel, P-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 13 nS, 25 nS |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Type: | MOSFET |
Maximum Operating Temperature: | + 150 C |
Operating Temperature | 150°C (TJ) |
Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.4A, 10V |
Supplier Device Package | TUMT6 |
Package / Case | 6-SMD, Flat Leads |
Current - Continuous Drain (Id) @ 25°C | 1.4A, 1A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
RoHS | Lead free / RoHS Compliant |