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| 产品描述：
Dual N-Channel 30 V 340 mΩ 1 W Surface Mount 2.5 V Drive MosFet - TUMT-6
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Rds On - Drain-Source Resistance: | 240 mOhms |
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| Width: | 1.7 mm |
| Technology: | Si |
| Height: | 0.77 mm |
| Vgs - Gate-Source Voltage: | 12 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 7 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 15 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 2 N-Channel |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Current - Continuous Drain (Id) @ 25°C | 1.5A |
| ECCN | EAR99 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS | Lead free / RoHS Compliant |
| Packaging: | Reel |
| Pd - Power Dissipation: | 1 W |
| Package / Case: | TUMT-6 |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Fall Time: | 6 ns |
| Length: | 2 mm |
| Series: | US6K1 |
| Factory Pack Quantity: | 3000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1.5 A |
| Rise Time: | 9 ns |
| Type: | MOSFET |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.5A, 4.5V |
| Supplier Device Package | TUMT6 |
| Package / Case | 6-SMD, Flat Leads |
| Manufacturer | Rohm Semiconductor |
| Part Status | Active |
| Base Part Number | *K1 |
| Lead Free Status / RoHS Status | 1 |
| RoHS | Lead free / RoHS Compliant |
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