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| 产品描述：
MJD Series 80 V 8 A Through Hole PNP Complementary Power Transistor
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
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| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 8A |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Frequency - Transition | 90MHz |
| Power - Max | 1.75W |
| Supplier Device Package | I-Pak |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| ECCN | EAR99 |
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