SPD02N50C3 specifications -Ameya360 electronic components purchase network


SPD02N50C3

ACTIVE
Product description : MOSFET N-CH 560V 1.8A DPAK
SPQ：2500
Datasheet : SPD02N50C3.pdf
ECAD Model:

Rds On - Drain-Source Resistance:	3 Ohms
Width:	6.22 mm
Pd - Power Dissipation:	25 W
Tradename:	CoolMOS
Height:	2.3 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	15 ns
Length:	6.5 mm
Series:	CoolMOS C3
Factory Pack Quantity:	2500
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	70 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Transistor Type:	1 N-Channel
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-252-3
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	10 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	SP000313942 SPD02N50C3BTMA1 SPD02N50C3XT
RoHS:	Details
Id - Continuous Drain Current:	1.8 A
Rise Time:	5 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： SPD02N50C3.pdf

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