SMMBT3906LT1G specifications -Ameya360 electronic components purchase network


SMMBT3906LT1G

ACTIVE EAR99
Product description : SMMBT Series 40 V 800 mA SMT PNP Silicon General Purpose Transistor - SOT-23
SPQ：1
Datasheet : --
ECAD Model:

DC Current Gain hFE Max:	60 at 0.1 mA at 1 V
Maximum DC Collector Current:	0.2 A
Packaging:	Reel
Length:	2.9 mm
Manufacturer:	ON Semiconductor
Pd - Power Dissipation:	300 mW
Transistor Polarity:	PNP
Brand:	ON Semiconductor
Package / Case:	SOT-23
Collector- Emitter Voltage VCEO Max:	40 V
Height:	0.94 mm
Unit Weight:	0.007090 oz
ECCN	EAR99
Emitter- Base Voltage VEBO:	5 V
Width:	1.3 mm
Collector- Base Voltage VCBO:	40 V
DC Collector/Base Gain hfe Min:	60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V
Series:	MMBT3906L
Minimum Operating Temperature:	- 55 C
Factory Pack Quantity:	3000
RoHS:	Details
Product Category:	Bipolar Transistors - BJT
Gain Bandwidth Product fT:	250 MHz
Configuration:	Single
Maximum Operating Temperature:	+ 150 C

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Stock code :	721749
Mfg name :	onsemi
MPN :	SMMBT3906LT1G
Product description :	SMMBT Series 40 V 800 mA SMT PNP Silicon General Purpose Transistor - SOT-23

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