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| 产品描述：
RZF030P01 Series 12 V 3 A 18 nC Surface Mount P-Channel Mosfet - TUMT-3
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Reel |
|---|---|
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 18 nC |
| Pd - Power Dissipation: | 800 mW |
| Package / Case: | TUMT-3 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 120 ns |
| Length: | 2 mm |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 210 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 12 V |
| Transistor Type: | 1 P-Channel |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 3A, 4.5V |
| Supplier Device Package | TUMT3 |
| Power Dissipation (Max) | 800mW (Ta) |
| Technology | MOSFET (Metal Oxide) |
| Packaging | Tape & Reel (TR) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| RoHS | Lead free / RoHS Compliant |
| Width: | 1.7 mm |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 0.77 mm |
| Vgs - Gate-Source Voltage: | 10 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 9 ns |
| Forward Transconductance - Min: | 5 S |
| Series: | RZF030P01 |
| Factory Pack Quantity: | 3000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 3 A |
| Rise Time: | 40 ns |
| Maximum Operating Temperature: | + 150 C |
| Categories | Discrete Semiconductor Products |
| Input Capacitance (Ciss) (Max) @ Vds | 1860pF @ 6V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain to Source Voltage (Vdss) | 12V |
| Package / Case | 3-SMD, Flat Leads |
| Manufacturer | Rohm Semiconductor |
| Part Status | Active |
| Vgs (Max) | ±10V |
| ECCN | EAR99 |
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