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| 产品描述：
MOSFET P-CH 12V 1.3A TUMT3
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| Rds On (Max) @ Id, Vgs | 260 mOhm @ 1.3A, 4.5V |
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| Power - Max | 800mW |
| Supplier Device Package | TUMT3 |
| Gate Charge (Qg) @ Vgs | 2.4nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | P-Channel |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 6V |
| Vgs (Max) | ±10V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| RoHS | Lead free / RoHS Compliant |
| Package / Case | 3-SMD, Flat Leads |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Part Status | Active |
| Manufacturer | Rohm Semiconductor |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 290pF @ 6V |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Power Dissipation (Max) | 800mW (Ta) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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