RSR025N03TL
  • NRND
  • SC-96
Product description : N-Channel 1 W 30 V 118 mΩ 4.1 nC SMT 4 V Drive MosFet - TSMT-3
SPQ:1
Datasheet :
ECAD Model:
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FET Type MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) @ Vds 165pF @ 10V
Operating Temperature 150°C (TJ)
Package / Case SC-96
FET 类型 MOSFET N 通道,金属氧化物
Operating Temperature 150°C (TJ)
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 5V
Rds On (Max) @ Id, Vgs 70 mOhm @ 2.5A, 10V
Supplier Device Package TSMT3
Power Dissipation (Max) 1W (Ta)
Technology MOSFET (Metal Oxide)
Packaging Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Drain to Source Voltage (Vdss) 30V
Rds On (Max) @ Id, Vgs 70 mOhm @ 2.5A, 10V
Gate Charge (Qg) @ Vgs 4.1nC @ 5V
Power - Max 1W
Mounting Type Surface Mount
Supplier Device Package TSMT3
FET 功能 逻辑电平栅极,4V 驱动
Categories Discrete Semiconductor Products
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 30V
Package / Case SC-96
Manufacturer Rohm Semiconductor
Part Status Active
Vgs (Max) 20V
RoHS Lead free / RoHS Compliant
Datasheet:
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