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| 产品描述：
MOSFET N-CH 30V 13A HSMT8
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| Rds On (Max) @ Id, Vgs | 6 mOhm @ 13A, 10V |
|---|---|
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Manufacturer | Rohm Semiconductor |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Part Status | Active |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 15V |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs (Max) | ±20V |
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