| EMB51T2R | ||
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| 产品描述：
TRANS 2PNP PREBIAS 0.15W EMT6
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| 标准包装：8000 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| Frequency - Transition | 250MHz |
|---|---|
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | EMT6 |
| Package / Case | SOT-563, SOT-666 |
| Part Status | Active |
| Current - Collector Cutoff (Max) | 500nA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Categories | Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Resistor - Base (R1) | 22 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Manufacturer | Rohm Semiconductor |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
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