Qg - Gate Charge: | 120 nC |
---|---|
Packaging: | Reel |
Pd - Power Dissipation: | 1.5 W |
Package / Case: | TSMT-8 |
Configuration: | 1 N-Channel |
Mounting Style: | SMD/SMT |
Fall Time: | 7 ns |
Manufacturer: | ROHM Semiconductor |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 30 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 45 V |
Transistor Type: | 1 N-Channel |
Operating Temperature | 150°C (TJ) |
Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 53 mOhm @ 4A, 10V |
Supplier Device Package | TSMT8 |
Package / Case | 8-SMD, Flat Lead |
Lead Free Status / RoHS Status | 1 |
RoHS | Lead free / RoHS Compliant |
Rds On - Drain-Source Resistance: | 53 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Vgs - Gate-Source Voltage: | 20 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 9 ns |
Series: | QS8K21 |
Factory Pack Quantity: | 3000 |
Brand: | ROHM Semiconductor |
RoHS: | Details |
Id - Continuous Drain Current: | 4 A |
Rise Time: | 25 ns |
Maximum Operating Temperature: | + 150 C |
FET Feature | Logic Level Gate |
FET Type | 2 N-Channel (Dual) |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Drain to Source Voltage (Vdss) | 45V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |