NGTG30N60FLWG specifications -Ameya360 electronic components purchase network

NGTG30N60FLWG


NGTG30N60FLWG

ACTIVE TO-247
Product description : ON Semiconductor NGTG30N60FLWG, N沟道 IGBT 晶体管, 60 A, Vce=600 V, 1MHz, 3针 TO-247封装
SPQ：210
Datasheet : NGTG30N60FLWG.pdf
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Current - Collector Pulsed (Icm)	120A
Power - Max	250W
IGBT Type	Trench Field Stop
Td (on/off) @ 25°C	83ns/170ns
Part Status	Active
Manufacturer	ON Semiconductor
Voltage - Collector Emitter Breakdown (Max)	600V
Mounting Type	Through Hole
Switching Energy	700µJ (on), 280µJ (off)
Packaging	Tube
Package / Case	TO-247-3
Test Condition	400V, 30A, 10 Ohm, 15V
Supplier Device Package	TO-247
Current - Collector (Ic) (Max)	60A
Category	Discrete Semiconductor Products
Gate Charge	170nC
Family	Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Input Type	Standard

Datasheet： NGTG30N60FLWG.pdf

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Stock code :	653842
Mfg name :	onsemi
MPN :	NGTG30N60FLWG
Product description :	ON Semiconductor NGTG30N60FLWG, N沟道 IGBT 晶体管, 60 A, Vce=600 V, 1MHz, 3针 TO-247封装

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