| MJD50TF | ||
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| 产品描述：
MJD50 Series 400 V CE Breakdown 1 A NPN Epitaxial Silicon Transistor - I-PAK
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| 标准包装：2000 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Collector- Base Voltage VCBO: | 500 V |
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| Collector-Emitter Saturation Voltage: | 1 V |
| Minimum Operating Temperature: | - 65 C |
| Package / Case: | TO-252 |
| Gain Bandwidth Product fT: | 10 MHz |
| Unit Weight: | 0.009184 oz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain hFE Max: | 150 |
| Length: | 6.6 mm |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 2000 |
| Part # Aliases: | MJD50TF_NL |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 6.1 mm |
| Packaging: | Reel |
| Pd - Power Dissipation: | 15 W |
| Height: | 2.3 mm |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 1 A |
| Continuous Collector Current: | 1 A |
| DC Collector/Base Gain hfe Min: | 30 |
| Transistor Polarity: | NPN |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 400 V |
| ECCN | EAR99 |
| 数据手册： |
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