MJB44H11G specifications -Ameya360 electronic components purchase network


MJB44H11G

ACTIVE EAR99
Product description : MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3
SPQ：1
Datasheet : MJB44H11G.pdf
ECAD Model:

Collector- Base Voltage VCBO:	5 V
Collector-Emitter Saturation Voltage:	1 V
Minimum Operating Temperature:	- 55 C
Package / Case:	TO-263-3 (D2PAK)
Gain Bandwidth Product fT:	50 MHz
Mounting Style:	SMD/SMT
Maximum DC Collector Current:	10 A
Continuous Collector Current:	10 A
Manufacturer:	ON Semiconductor
Transistor Polarity:	NPN
Brand:	ON Semiconductor
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	9.65 mm (Max)
Packaging:	Tube
Pd - Power Dissipation:	50 W
Height:	4.83 mm (Max)
Configuration:	Single
Emitter- Base Voltage VEBO:	5 V
Length:	10.29 mm (Max)
DC Collector/Base Gain hfe Min:	60
Series:	MJB44H11
Factory Pack Quantity:	50
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	80 V
ECCN	EAR99

Datasheet： MJB44H11G.pdf

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Stock code :	629554
Mfg name :	onsemi
MPN :	MJB44H11G
Product description :	MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3

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