Width: | 5.31 mm |
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Rds On - Drain-Source Resistance: | 350 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TO-247-3 |
Height: | 26.59 mm |
Vgs - Gate-Source Voltage: | 30 V |
Mounting Style: | Through Hole |
Fall Time: | 56 ns |
Length: | 20.29 mm |
Manufacturer: | IXYS |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 95 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 1200 V |
Type: | Polar HiPerFET Power MOSFET |
Maximum Operating Temperature: | + 150 C |
Packaging: | Tube |
Qg - Gate Charge: | 310 nC |
Pd - Power Dissipation: | 1.25 kW |
Tradename: | Polar, HiPerFET |
Vgs th - Gate-Source Threshold Voltage: | 6.5 V |
Configuration: | Single |
Unit Weight: | 0.056438 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 57 ns |
Forward Transconductance - Min: | 13 S |
Series: | IXFB30N120P |
Factory Pack Quantity: | 25 |
Brand: | IXYS |
RoHS: | Details |
Id - Continuous Drain Current: | 30 A |
Rise Time: | 60 ns |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
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