IRF9392TRPBF specifications -Ameya360 electronic components purchase network


IRF9392TRPBF

ACTIVE
Product description : MOSFET P-CH 30V 9.8A 8SOIC
SPQ：4000
Datasheet : IRF9392TRPBF.pdf
ECAD Model:

Packaging:	Reel
Qg - Gate Charge:	14 nC
Pd - Power Dissipation:	2.5 W
Package / Case:	SOIC-8
Vgs - Gate-Source Voltage:	25 V
Mounting Style:	SMD/SMT
Fall Time:	58 ns
Forward Transconductance - Min:	36 S
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	73 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 30 V
Transistor Type:	1 P-Channel
Rds On - Drain-Source Resistance:	17.5 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	Single
Unit Weight:	0.019048 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	15 ns
Manufacturer:	Infineon
Factory Pack Quantity:	4000
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	- 9.8 A
Rise Time:	47 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IRF9392TRPBF.pdf

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