EMZ7T2R
  • 1 (Unlimited)
  • 量产中
  • EMT6
产品描述:
NPN/PNP DUAL-TR.12V 0,5A EMT6 RoHSconf
标准包装:8000
数据手册:
ECAD模型:
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Package / Case SOT-563, SOT-666
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 500mA
Category Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max) 12V
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
Packaging Cut Tape (CT)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequency - Transition 320MHz, 260MHz
Power - Max 150mW
Supplier Device Package EMT6
Part Status Active
Manufacturer Rohm Semiconductor
Family Transistors - Bipolar (BJT) - Arrays
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 10mA, 2V
Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays
Base Part Number *MZ7
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