EMH9T2R
  • 1 (Unlimited)
  • 量产中
  • SOT-563, SOT-666
产品描述:
TRANS 2NPN PREBIAS 0.15W EMT6
标准包装:8000
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Packaging: Reel
Width: 1.2 mm
Continuous Collector Current: 100 mA
DC Collector/Base Gain hfe Min: 68
Typical Resistor Ratio: 4.7
Pd - Power Dissipation: 150 mW
Transistor Polarity: NPN
Brand: ROHM Semiconductor
Package / Case: EMT-6
Collector- Emitter Voltage VCEO Max: 50 V
Configuration: Dual
Maximum Operating Temperature: + 150 C
Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Resistor - Base (R1) 10 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Power - Max 150mW
Manufacturer Rohm Semiconductor
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Base Part Number *MH9
Peak DC Collector Current: 100 mA
Typical Input Resistor: 10 kOhms
Length: 1.6 mm
Manufacturer: ROHM Semiconductor
Series: EMH9
Minimum Operating Temperature: - 55 C
Factory Pack Quantity: 8000
RoHS:  Details
Product Category: Bipolar Transistors - Pre-Biased
Height: 0.5 mm
Mounting Style: SMD/SMT
Frequency - Transition 250MHz
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Supplier Device Package EMT6
Package / Case SOT-563, SOT-666
Part Status Active
Current - Collector Cutoff (Max) 500nA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Lead free / RoHS Compliant
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