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| 产品描述：
TRANS NPN/PNP PREBIAS 0.15W EMT6
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| 标准包装：8000 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Resistor - Base (R1) (Ohms) | 47k, 10k |
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA |
| Power - Max | 150mW |
| Resistor - Emitter Base (R2) (Ohms) | 47k |
| Current - Collector (Ic) (Max) | 100mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Categories | Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Frequency - Transition | 250MHz |
| Package / Case | SOT-563, SOT-666 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package | EMT6 |
| Part Status | Active |
| Manufacturer | Rohm Semiconductor |
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Packaging | Tape & Reel (TR) |
| Resistor - Base (R1) | 47 kOhms, 10 kOhms |
| Base Part Number | *MD4 |
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