| EM6J1T2R | ||
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| 产品描述：
MOSFET 2P-CH 20V 0.2A EMT6
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Reel |
|---|---|
| Number of Channels: | 2 Channel |
| Qg - Gate Charge: | 1.4 nC |
| Series: | EM6J1 |
| Transistor Polarity: | P-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Transistor Type: | 2 P-Channel |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 200mA, 4.5V |
| Supplier Device Package | EMT6 |
| Package / Case | SOT-563, SOT-666 |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS | Lead free / RoHS Compliant |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 1.2 Ohms |
| Manufacturer: | ROHM Semiconductor |
| Pd - Power Dissipation: | 150 mW |
| Factory Pack Quantity: | 8000 |
| Brand: | ROHM Semiconductor |
| Package / Case: | EMT-6 |
| Id - Continuous Drain Current: | - 200 mA |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 10V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 150mW |
| Lead Free Status / RoHS Status | 1 |
| Base Part Number | *J1 |
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