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| 产品描述：
Single N-Channel 30 V 14 mOhm 19.3 nC 2.1 W Silicon SMT Mosfet - POWERDI3333-8
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| 标准包装：2000 | ||
| 数据手册： | ||
| ECAD模型:
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| Qg - Gate Charge: | 45.7 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 1 W |
| Tradename: | DIOFET |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Vgs - Gate-Source Voltage: | +/- 12 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 6.6 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 33.1 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 9 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | PowerDI3333-8 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.002540 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 5.5 ns |
| Series: | DMS30 |
| Factory Pack Quantity: | 2000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 9.5 A |
| Rise Time: | 24.4 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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