Qg - Gate Charge: | 45.7 nC |
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Packaging: | Reel |
Pd - Power Dissipation: | 1 W |
Tradename: | DIOFET |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Vgs - Gate-Source Voltage: | +/- 12 V |
Mounting Style: | SMD/SMT |
Fall Time: | 6.6 ns |
Manufacturer: | Diodes Incorporated |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 33.1 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 9 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | PowerDI3333-8 |
Configuration: | 1 N-Channel |
Unit Weight: | 0.002540 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 5.5 ns |
Series: | DMS30 |
Factory Pack Quantity: | 2000 |
Brand: | Diodes Incorporated |
RoHS: | Details |
Id - Continuous Drain Current: | 9.5 A |
Rise Time: | 24.4 ns |
Maximum Operating Temperature: | + 150 C |
数据手册: |
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