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| 产品描述：
DFN1006-3/20V N-CHANNEL ENHANCEMENT MODE MOSFET
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| 标准包装：10000 | ||
| 数据手册： |
- 规格参数
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| Package / Case | 3-UFDFN |
|---|---|
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.32A (Ta) |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 67.62pF @ 20V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 300mA, 4.5V |
| Power - Max | 468mW |
| Supplier Device Package | X1-DFN1006-3 |
| Gate Charge (Qg) @ Vgs | 0.89nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| 数据手册： |
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