C2M0160120D
  • 量产中
  • TO-247-3
产品描述:
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17.7A; 125W; TO247-3
标准包装:1
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FET Feature Silicon Carbide (SiC)
Package / Case TO-247-3
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 17.7A (Tc)
Part Status Active
Manufacturer Cree/Wolfspeed
Series Z-FET™
Vgs(th) (Max) @ Id 2.5V @ 500µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Rds On (Max) @ Id, Vgs 196 mOhm @ 10A, 20V
Power - Max 125W
Supplier Device Package TO-247-3
Gate Charge (Qg) @ Vgs 32.6nC @ 20V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 527pF @ 800V
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