FET Feature | Silicon Carbide (SiC) |
---|---|
Package / Case | TO-247-3 |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 17.7A (Tc) |
Part Status | Active |
Manufacturer | Cree/Wolfspeed |
Series | Z-FET™ |
Vgs(th) (Max) @ Id | 2.5V @ 500µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Packaging | Tube |
Rds On (Max) @ Id, Vgs | 196 mOhm @ 10A, 20V |
Power - Max | 125W |
Supplier Device Package | TO-247-3 |
Gate Charge (Qg) @ Vgs | 32.6nC @ 20V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Through Hole |
Input Capacitance (Ciss) @ Vds | 527pF @ 800V |
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